Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

G. William Burg; Nitin Prasad; Babak Fallahazad; Amithraj Valsaraj; Kyounghwan Kim; Takashi Taniguchi; Kenji Watanabe; Qingxiao Wang; Moon J. Kim; Leonard F. Register; Emanuel Tutuc

doi:10.1021/acs.nanolett.7b01505

arXiv · 1706.08034

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

G. William Burg·Nitin Prasad·Babak Fallahazad·Amithraj Valsaraj·Kyounghwan Kim·Takashi Taniguchi·Kenji Watanabe·Qingxiao Wang·Moon J. Kim·Leonard F. Register·Emanuel Tutuc

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Abstract

We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 K and 300 K, respectively.

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G. William Burg, Nitin Prasad, Babak Fallahazad, Amithraj Valsaraj, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Qingxiao Wang, Moon J. Kim, Leonard F. Register, Emanuel Tutuc. 2017-06-25. Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures. https://doi.org/10.1021/acs.nanolett.7b01505

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