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arXiv · 1706.04445

Impurity band conduction in group-IV ferromagnetic semiconductor Ge1-xFex with nanoscale fluctuations in Fe concentration

Yoshisuke Ban·Yuki K. Wakabayashi·Ryosho Nakane·Masaaki Tanaka
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Abstract

We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3 - 14 %) with and without boron (B) doping, by measuring their transport characteristics; the temperature dependence of resistivity, hole concentration, mobility, and the relation between the anomalous Hall conductivity versus conductivity. At relatively low x (= 2.3 %), the transport in the undoped Ge1-xFex film is dominated by hole hopping between Fe-rich hopping sites in the Fe impurity band, whereas that in the B-doped Ge1-xFex film is dominated by the holes in the valence band in the degenerated Fe-poor regions. As x increases (x = 2.3 - 14 %), the transport in the both undoped and B-doped Ge1-xFex films is dominated by hole hopping between the Fe-rich hopping sites of the impurity band. The magnetic properties of the Ge1-xFex films are studied by various methods including magnetic circular dichroism, magnetization and anomalous Hall resistance, and are not influenced by B-doping. We show band profile models of both undoped and B-doped Ge1-xFex films, which can explain the transport and the magnetic properties of the Ge1-xFex films.

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Yoshisuke Ban, Yuki K. Wakabayashi, Ryosho Nakane, Masaaki Tanaka. 2017-06-14. Impurity band conduction in group-IV ferromagnetic semiconductor Ge1-xFex with nanoscale fluctuations in Fe concentration. https://doi.org/10.1063/1.5022543

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