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arXiv · 1706.04050

Effects of P, As, and Sb heavy doping on band gap narrowing of germanium as light-emitting materials

Zhong-Hua Dai·Yao-Ping Xie·Yi-Chen Qian·Li-Juan Hu·Xiao-Di Li·Hai-Tao Ma
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Abstract

The n-type tensile-strained Ge can be used as high-efficient light-emitting materials. To reveal the influence of n-type doping on the electronic structure of Ge, we have computed the electronic structure of P, As and Sb doped Ge using first-principles calculation and band unfolding technique. We find that these n-type doping can induce both indirect and direct band gap narrowing, which well reproduce experimental observation that red-shifts occur in photoluminescence spectra of Ge with n-type doping. We reveal that the indirect band gap narrowing is mainly caused by impurity state, while the direct band gap narrowing is a result of lattice distortion induced by the dopant atom. Moreover, we find that it can use E_g^{\Gamma}-E_g^L to explain the voltage increase was needed to reach the same current densities of light emission through the different samples with increasing doping concentrations.

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Zhong-Hua Dai, Yao-Ping Xie, Yi-Chen Qian, Li-Juan Hu, Xiao-Di Li, Hai-Tao Ma. 2017-06-13. Effects of P, As, and Sb heavy doping on band gap narrowing of germanium as light-emitting materials. https://arxiv.org/abs/1706.04050

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