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arXiv · 1705.10059

Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

Tian Li·Sanghoon Kim·Seung-Jae Lee·Seo-Won Lee·Tomohiro Koyama·Daichi Chiba·Takahiro Moriyama·Kyung-Jin Lee·Kab-Jin Kim·Teruo Ono
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Abstract

An asymmetric magnetoresistance (MR) is investigated in Py/Pt bilayers. The asymmetric MR linearly increases with current density up to a threshold, and increases more rapidly above the threshold. To reveal the origin of threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of asymmetric MR.

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Tian Li, Sanghoon Kim, Seung-Jae Lee, Seo-Won Lee, Tomohiro Koyama, Daichi Chiba, Takahiro Moriyama, Kyung-Jin Lee, Kab-Jin Kim, Teruo Ono. 2017-05-29. Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers. https://doi.org/10.7567/apex.10.073001

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