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arXiv · 1704.08567

Electrically Tunable Optical Nonlinearities in Graphene-Covered SiN Waveguides Characterized by Four-Wave Mixing

Koen Alexander·N. A. Savostianova·S. A. Mikhailov·Bart Kuyken·Dries Van Thourhout
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Abstract

We present a degenerate four-wave mixing experiment on a silicon nitride (SiN) waveguide covered with gated graphene. We observe strong dependencies on signal-pump detuning and Fermi energy, i.e. the optical nonlinearity is demonstrated to be electrically tunable. In the vicinity of the interband absorption edge ($2|E_F|\approx \hbar\omega$) a peak value of the waveguide nonlinear parameter of $\approx$ 6400 m$^{-1}$W$^{-1}$, corresponding to a graphene nonlinear sheet conductivity $|\sigma_s^{(3)}|\approx4.3\cdot 10^{-19}$ A m$^2$V$^{-3}$ is measured.

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Koen Alexander, N. A. Savostianova, S. A. Mikhailov, Bart Kuyken, Dries Van Thourhout. 2017-04-27. Electrically Tunable Optical Nonlinearities in Graphene-Covered SiN Waveguides Characterized by Four-Wave Mixing. https://doi.org/10.1021/acsphotonics.7b00559

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