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arXiv · 1704.08505

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Yannick Baines·Julien Buckley·Jérôme Biscarrat·Gennie Garnier·Matthew Charles·William Vandendaele·Charlotte Gillot·Marc Plissonnier
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Abstract

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.

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Yannick Baines, Julien Buckley, Jérôme Biscarrat, Gennie Garnier, Matthew Charles, William Vandendaele, Charlotte Gillot, Marc Plissonnier. 2017-05-09. Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact. https://doi.org/10.1038/s41598-017-08307-0

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