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arXiv · 1704.05448

Gate controlled spin-valley locking of resident carriers in WSe2 monolayers

P. Dey·Luyi Yang·C. Robert·G. Wang·B. Urbaszek·X. Marie·S. A. Crooker
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Abstract

Using time-resolved Kerr rotation, we measure the spin/valley dynamics of resident electrons and holes in single charge-tunable monolayers of the archetypal transition-metal dichalcogenide (TMD) semiconductor WSe2. In the n-type regime, we observe long (70 ns) polarization relaxation of electrons that is sensitive to in-plane magnetic fields $B_y$, indicating spin relaxation. In marked contrast, extraordinarily long (2 microsecond) polarization relaxation of holes is revealed in the p-type regime, that is unaffected by $B_y$, directly confirming long-standing expectations of strong spin-valley locking of holes in the valence band of monolayer TMDs. Supported by continuous-wave Kerr spectroscopy and Hanle measurements, these studies provide a unified picture of carrier polarization dynamics in monolayer TMDs, which can guide design principles for future valleytronic devices.

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P. Dey, Luyi Yang, C. Robert, G. Wang, B. Urbaszek, X. Marie, S. A. Crooker. 2017-04-18. Gate controlled spin-valley locking of resident carriers in WSe2 monolayers. https://doi.org/10.1103/physrevlett.119.137401

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