arXiv · 1704.01635
Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk
Abstract
Formation, emission and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs having nano-pan-cake shape have height of ~2 nm, lateral size of 20-50 nm and density of ~5x109 cm-2. Their emission observed at ~940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character indicating In-As intermixing, as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having dimeter ~3.2 mkm and providing free spectral range of ~27 nm and quality factors up to Q~13000. Threshold of ~50 W/cm2 and spontaneous emission coupling coefficient of ~0.2 were measured for this MD-QD system.
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D. V. Lebedev, M. M. Kulagina, S. I. Troshkov, A. A. Bogdanov, A. S. Vlasov, V. Yu. Davydov, A. N. Smirnov, J. L. Merz, J. Kapaldo, A. Gocalinska, G. Juska, S. T. Moroni, E. Pelucchi, D. Barettin, S. Rouvimov, A. M. Mintairov. 2017-03-23. Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk. https://doi.org/10.1063/1.4979029
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