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arXiv · 1703.03927

Temperature induced transition from p-n to n-n electronic behavior in Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction

Tanveer A. Dar·Arpana Agrawal·Ram J. Choudhary·Pranay K. Sen·Pankaj Misra·Pratima Sen
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Abstract

The transport characteristics across the pulsed laser deposited Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction exhibits p-n type semiconducting properties at 10 K while at 100 K, its characteristics become similar to that of an n-n junction. The reason for the same is attributed to the role of larger electronegativity of Ni as compared to Mg at 10 K and ionization of impurity states at 100 K. The above behavior is confirmed by performing the Hall measurements.

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Tanveer A. Dar, Arpana Agrawal, Ram J. Choudhary, Pranay K. Sen, Pankaj Misra, Pratima Sen. 2017-03-11. Temperature induced transition from p-n to n-n electronic behavior in Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction. https://arxiv.org/abs/1703.03927

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