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arXiv · 1703.03559

Gate tunable parallel double quantum dot in InAs double-nanowire junctions

S. Baba·S. Matsuo·H. Kamata·R. S. Deacon·A. Oiwa K. Li·H. Q. Xu·S. Tarucha
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Abstract

We report fabrication and measurement of a device where closely-placed two parallel InAs nanowires (NWs) are contacted by source and drain normal metal electrodes. Established technique includes selective deposition of double nanowires onto a previously defined gate region. By tuning the junction with the finger bottom gates, we confirmed the formation of parallel double quantum dots, one in each NW, with a finite electrostatic coupling between each other. With the fabrication technique established in this study, devices proposed for more advanced experiments, such as Cooper-pair splitting and the observation of parafermions, can be realized.

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S. Baba, S. Matsuo, H. Kamata, R. S. Deacon, A. Oiwa K. Li, H. Q. Xu, S. Tarucha. 2017-03-10. Gate tunable parallel double quantum dot in InAs double-nanowire junctions. https://doi.org/10.1063/1.4997646

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