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arXiv · 1703.00615

Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

Tetsuo Hatakeyama·Yuji Kiuchi·Mitsuru Sometani·Shinsuke Harada·Dai Okamoto·Hiroshi Yano·Yoshiyuki Yonezawa·Hajime Okumura
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Abstract

The effects of nitridation on the density of traps at SiO$_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge by nitridation, as well as the high density of interface traps that was not eliminated by nitridation.

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Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani, Shinsuke Harada, Dai Okamoto, Hiroshi Yano, Yoshiyuki Yonezawa, Hajime Okumura. 2017-03-02. Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements. https://doi.org/10.7567/apex.10.046601

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