High-Pressure Synthesis and Characterization of $β$-GeSe - A Semiconductor with Six-Rings in an Uncommon Boat Conformation

Abstract

Two-dimensional materials have significant potential for the development of new devices. Here we report the electronic and structural properties of $β$-GeSe, a previously unreported polymorph of GeSe, with a unique crystal structure that displays strong two-dimensional structural features. $β$-GeSe is made at high pressure and temperature and is stable under ambient conditions. We compare it to its structural and electronic relatives $α$-GeSe and black phosphorus. The $β$ form of GeSe displays a boat conformation for its Ge-Se six-ring, while the previously known $α$ form, and black phosphorus, display the more common chair conformation for their six-rings. Electronic structure calculations indicate that $β$-GeSe is a semiconductor, with an approximate bulk band gap of $Δ~\approx$ 0.5 eV, and, in its monolayer form, $Δ~\approx$ 0.9 eV. These values fall between those of $α$-GeSe and black phosphorus, making $β$-GeSe a promising candidate for future applications. The resistivity of our $β$-GeSe crystals measured in-plane is on the order of $ρ\approx$ 1 $Ω$cm, while being essentially temperature independent.