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arXiv · 1701.03581

Effect of photons on atoms in crystallization of amorphous silicon films

NuoFu Chen·Quanli Tao·Yiming Bai·Shaolin Ruan·Jikun Chen
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Abstract

The preferentially (220) orientated polycrystalline silicon films have been fabricated by performing photon-involved rapid thermal annealing upon amorphous silicon films. In contrast, conventional thermal annealing of the silicon amorphous films results in the preference of (111) orientated crystallization. This difference reveals the overlooked impaction of photons upon silicon atoms, which results in the preferential orientation of lattice plans with the smallest density of atoms on their projection plane rather than the lowest energies.

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NuoFu Chen, Quanli Tao, Yiming Bai, Shaolin Ruan, Jikun Chen. 2017-01-13. Effect of photons on atoms in crystallization of amorphous silicon films. https://arxiv.org/abs/1701.03581

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