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arXiv · 1701.00506

Combined electrical transport and capacitance spectroscopy of a ${\mathrm{MoS_2-LiNbO_3}}$ field effect transistor

W. Michailow·F. J. R. Schülein·B. Möller·E. Preciado·A. E. Nguyen·G. v. Son·J. Mann·A. L. Hörner·A. Wixforth·L. Bartels·H. J. Krenner
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Abstract

We have measured both the current-voltage ($I_\mathrm{SD}$-$V_\mathrm{GS}$) and capacitance-voltage ($C$-$V_\mathrm{GS}$) characteristics of a $\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured $I_\mathrm{SD}$-$V_\mathrm{GS}$ characteristics over the \emph{entire range} of $V_\mathrm{GS}$. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.

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W. Michailow, F. J. R. Schülein, B. Möller, E. Preciado, A. E. Nguyen, G. v. Son, J. Mann, A. L. Hörner, A. Wixforth, L. Bartels, H. J. Krenner. 2017-01-02. Combined electrical transport and capacitance spectroscopy of a ${\mathrm{MoS_2-LiNbO_3}}$ field effect transistor. https://doi.org/10.1063/1.4973862

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