Morphological Aspects of Porous Silicon Prepared by Photoelectrochemical Etching

Oday A. Al-Owaedi; Sabah; M. Ali

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arXiv · 1701.00442

Morphological Aspects of Porous Silicon Prepared by Photoelectrochemical Etching

Oday A. Al-Owaedi·Sabah·M. Ali

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Abstract

In this work the effects of coherent radiation (Laser) and incoherent radiation (Halogen lamp) during the electrochemical etching process on the structural characteristics of n-type PSi samples were investigated. The porosity values were measured by depending on the microstructure analyses and Gravimetric measurements. Surface morphology, layer thickness, pore diameter, pore shape, wall thickness and etching rate were studied by depending on Scanning electron-microscopic (SEM) images

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Oday A. Al-Owaedi, Sabah, M. Ali. 2016-12-02. Morphological Aspects of Porous Silicon Prepared by Photoelectrochemical Etching. https://arxiv.org/abs/1701.00442

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