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arXiv · 1611.09578

Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si

Baojie Feng·Botao Fu·Shusuke Kasamatsu·Suguru Ito·Peng Cheng·Cheng-Cheng Liu·Ya Feng·Shilong Wu·Sanjoy K. Mahatha·Polina Sheverdyaeva·Paolo Moras·Masashi Arita·Osamu Sugino·Tai-Chang Chiang·Kenya Shimada·Koji Miyamoto·Taichi Okuda·Kehui Wu·Lan Chen·Yugui Yao·Iwao Matsuda
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Abstract

Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the {\Gamma} point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a new platform to study the novel physical properties in two-dimensional Dirac materials and provide new opportunities to realize high-speed low-dissipation devices.

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Baojie Feng, Botao Fu, Shusuke Kasamatsu, Suguru Ito, Peng Cheng, Cheng-Cheng Liu, Ya Feng, Shilong Wu, Sanjoy K. Mahatha, Polina Sheverdyaeva, Paolo Moras, Masashi Arita, Osamu Sugino, Tai-Chang Chiang, Kenya Shimada, Koji Miyamoto, Taichi Okuda, Kehui Wu, Lan Chen, Yugui Yao, Iwao Matsuda. 2016-11-29. Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si. https://doi.org/10.1038/s41467-017-01108-z

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