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arXiv · 1611.08242

Computing with volatile memristors: An application of non-pinched hysteresis

Y. V. Pershin·S. N. Shevchenko
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Abstract

The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a prototype of volatile memristor, which is characterized by a non-pinched hysteresis loop. Memristive model of the structure is developed and used to simulate a polymorphic circuit implementing in-memory computing gates such as the material implication. Specific regions of parameter space realizing useful logic functions are identified. Our results are applicable to other realizations of volatile memory devices.

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Y. V. Pershin, S. N. Shevchenko. 2016-11-24. Computing with volatile memristors: An application of non-pinched hysteresis. https://doi.org/10.1088/1361-6528%2Faa53bf

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