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arXiv · 1611.05208

Half-filled intermediate bands Si material formed by energetically metastable interstitial sulfur atom

Ke-Fan Wang·Mingguo Liu·Yaping Ma·Zhenxiang Cheng·Yuanxu Wang·Xudong Xiao
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Abstract

Hyperdoped metastable sulfur atoms endow crystalline silicon with a strong sub-bandgap light absorption. In order to explore such metastable states, we develop a new high-throughput first-principles calculation method to search for all of the energetically metastable states for an interstitial sulfur atom inside crystalline silicon. Finally, we obtain sixty-three metastable interstitial states and they can be classified into ten types. Interestingly, twenty-eight (44% in total) of lower-energy metastable states can produce a well-isolated and half-filled intermediate band (IB) inside silicon forbidden gap, which makes sulfur hyperdoped silicon to be a desirable material for IB solar cells.

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Ke-Fan Wang, Mingguo Liu, Yaping Ma, Zhenxiang Cheng, Yuanxu Wang, Xudong Xiao. 2016-11-16. Half-filled intermediate bands Si material formed by energetically metastable interstitial sulfur atom. https://arxiv.org/abs/1611.05208

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