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arXiv · 1610.07759

ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)

Yi Zhang·Zhongkai Liu·Bo Zhou·Yeongkwan Kim·Lexian Yang·Hyejin Ryu·Choongyu Hwang·Yulin Chen·Zahid Hussain·Zhi-Xun Shen·Sung-Kwan Mo
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Abstract

SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular tothe (111) surface, demonstrate the projected Dirac cones at the Gamma_bar and M_bar points of the surface Brillouinzone. In addition, we observe a Dirac-cone-like band structure at the Gamma point of the bulk Brillouin zone,whose Dirac energy is largely different from those at the Gamma_bar and M_bar points.

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Yi Zhang, Zhongkai Liu, Bo Zhou, Yeongkwan Kim, Lexian Yang, Hyejin Ryu, Choongyu Hwang, Yulin Chen, Zahid Hussain, Zhi-Xun Shen, Sung-Kwan Mo. 2016-10-25. ARPES study of the epitaxially grown topological crystalline insulator SnTe(111). https://doi.org/10.1016/j.elspec.2016.10.003

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