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arXiv · 1609.05859

Spin-dependent transport and current modulation in a current-in-plane field-effect transistor

Toshiki Kanaki·Tomohiro Koyama·Daichi Chiba·Shinobu Ohya·Masaaki Tanaka
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Abstract

We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.

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Toshiki Kanaki, Tomohiro Koyama, Daichi Chiba, Shinobu Ohya, Masaaki Tanaka. 2016-09-13. Spin-dependent transport and current modulation in a current-in-plane field-effect transistor. https://doi.org/10.1063/1.4964419

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