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arXiv · 1609.05725

Characterization of spin-orbit fields in InGaAs quantum wells

T. Henn·L. Czornomaz·G. Salis
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Abstract

Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the spatial overlap between pump and probe pulses, a diffusive velocity is imprinted on the measured electron spins and a spin precession in the spin-orbit field is measured. A Rashba symmetry of the SOI is determined. By comparing the spatial precession frequency gradient with the spin decay rate, an upper limit for the Rashba coefficients $α$ of 2$\times$10$^{-12}$ eVm is estimated.

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T. Henn, L. Czornomaz, G. Salis. 2016-09-19. Characterization of spin-orbit fields in InGaAs quantum wells. https://doi.org/10.1063/1.4964764

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