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arXiv · 1609.02843

Theory of electron-plasmon coupling in semiconductors

Fabio Caruso·Feliciano Giustino
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Abstract

The ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for describing electron-plasmon interactions in real materials is still missing. Here, starting from a many-body Green's function approach, we develop an ab initio approach for investigating electron-plasmon coupling in solids. As a first demonstration of this methodology, we show that electron-plasmon scattering is the primary mechanism for the cooling of hot carriers in doped silicon, it is key to explain measured electron mobilities at high doping, and it leads to a quantum zero-point renormalization of the band gap in agreement with experiment.

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Fabio Caruso, Feliciano Giustino. 2016-09-09. Theory of electron-plasmon coupling in semiconductors. https://doi.org/10.1103/physrevb.94.115208

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