Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Marco Bomben; Alvise Bagolini; Maurizio Boscardin; Luciano Bosisio; Giovanni Calderini; Jacques Chauveau; Audrey Ducourthial; Gabriele Giacomini; Giovanni Marchiori; Nicola Zorzi

doi:10.1109/nssmic.2015.7581991

arXiv · 1609.02128

Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Marco Bomben·Alvise Bagolini·Maurizio Boscardin·Luciano Bosisio·Giovanni Calderini·Jacques Chauveau·Audrey Ducourthial·Gabriele Giacomini·Giovanni Marchiori·Nicola Zorzi

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Abstract

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

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Marco Bomben, Alvise Bagolini, Maurizio Boscardin, Luciano Bosisio, Giovanni Calderini, Jacques Chauveau, Audrey Ducourthial, Gabriele Giacomini, Giovanni Marchiori, Nicola Zorzi. 2016-09-07. Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade. https://doi.org/10.1109/nssmic.2015.7581991

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