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arXiv · 1608.02528

Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy

Lukas Neumann·Daniel Meier·Jan Schmalhorst·Karsten Rott·Günter Reiss·Markus Meinert
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Abstract

We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|\Theta_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It thus can be a good choice for the integration of spin Hall driven writing of information in magnetic memory or logic devices that require a high-temperature annealing process during fabrication.

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Lukas Neumann, Daniel Meier, Jan Schmalhorst, Karsten Rott, Günter Reiss, Markus Meinert. 2016-08-08. Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy. https://doi.org/10.1063/1.4964415

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