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arXiv · 1608.00894

Theory of Landau level mixing in heavily graded graphene p-n junctions

Samuel W LaGasse·Ji Ung Lee
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Abstract

We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta function disorder potential allows us to compare experimental results on different devices from the literature. We find that wide p-n junctions suppress mixing of $n \neq 0$ Landau levels. Our simulations spatially resolve carrier transport in the device, for the first time, revealing separation of higher order Landau levels in strongly graded junctions, which suppresses mixing.

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Samuel W LaGasse, Ji Ung Lee. 2016-08-02. Theory of Landau level mixing in heavily graded graphene p-n junctions. https://doi.org/10.1103/physrevb.94.165312

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