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arXiv · 1607.07855

Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

Junfeng He·Chaofan Zhang·Nirmal J. Ghimire·Tian Liang·Chunjing Jia·Juan Jiang·Shujie Tang·Sudi Chen·Yu He·S. -K. Mo·C. C. Hwang·M. Hashimoto·D. H. Lu·B. Moritz·T. P. Devereaux·Y. L. Chen·J. F. Mitchell·Z. -X. Shen
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Abstract

An extreme magnetoresistance (XMR) has recently been observed in several non-magnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

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Junfeng He, Chaofan Zhang, Nirmal J. Ghimire, Tian Liang, Chunjing Jia, Juan Jiang, Shujie Tang, Sudi Chen, Yu He, S. -K. Mo, C. C. Hwang, M. Hashimoto, D. H. Lu, B. Moritz, T. P. Devereaux, Y. L. Chen, J. F. Mitchell, Z. -X. Shen. 2016-07-26. Distinct Electronic Structure for the Extreme Magnetoresistance in YSb. https://doi.org/10.1103/physrevlett.117.267201

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