arXiv ScienceSearch

arXiv · 1607.06880

Two objective and independent fracture parameters for interface cracks and a paradox

Abstract

Due to the oscillatory singular stress field around a crack tip, interface fracture has some peculiar features. This paper is focused on two of them. One can be reflected by a proposed paradox that geometrically similar structures with interface cracks under similar loadings may have different failure behaviors. The other one is that the existing fracture parameters of the oscillatory singular stress field, such as a complex stress intensity factor, exhibit some non-objectivity because their phase angle depend on an arbitrarily chosen length. Two objective and independent fracture parameters are proposed which can fully characterize the stress field near the crack tip. One parameter represents the stress intensity with classical unit of stress intensity factors. It is interesting to find that the loading mode can be characterized by a length as the other parameter, which can properly reflect the phase of the stress oscillation with respect to the distance to the crack tip. This is quite different from other crack tip fields in which the loading mode is usually expressed by a phase angle. The corresponding failure criterion for interface cracks does not include any arbitrarily chosen quantity, and therefore is convenient for comparing and accumulating experimental results, even existing ones.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Jia-Min Zhao, He-Ling Wang, Bin Liu. 2016-07-23. Two objective and independent fracture parameters for interface cracks and a paradox. https://doi.org/10.1115/1.4035932

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Spin-Axis Dynamic Locking

The all-electrical realization of highly spin-polarized currents and their efficient conversion into pure spin currents remains a fundamental challenge in spintronics. Here, we report a spin-axis dynamic locking (SADL) effect in altermagnets that pins the high and dynamically robust spin polarization to the crystalline axes: an in-plane electric field along one principal axis drives a highly spin-up-polarized current, whereas along the orthogonal axis, it generates a symmetry-enforced, equal-magnitude spin-down current. Consequently, applying an electric field diagonally yields a transverse pure spin current, reaching 100% charge-to-spin conversion in the ideal limit. Mechanistically, SADL originates from a spin-split tent-state band structure whose Lifshitz transitions delimit an open-Fermi-line regime. The momentum-separated Fermi lines carry orthogonal nonzero winding vectors, producing a pronounced velocity contrast while suppressing ordinary backscattering to dynamically stabilize the axial spin selectivity. High-throughput first-principles screening confirms SADL in broad materials. Notably, monolayer Cr2WSe4 and synthesized bulk (BaF)2Mn2Se2O exhibit efficiencies close to the ideal limit, paving the way for ultra-low-power, reconfigurable spintronic devices where the spin states are governed solely by electric field orientation.

cond-mat.other

Antisymmetric spontaneous resistivity anisotropy due to hard-axis collapse in polycrystalline Co thin films

We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system exhibits distinct remanent resistance levels in both the in-plane longitudinal and transverse voltage responses. In particular, the planar Hall resistance shows multiple stable and reproducible levels at room temperature, enabling the identification of at least three remanent states that can be distinguished and used for information storage. These resistance levels originate from non-uniform magnetic configurations stabilized after the application and removal of the external magnetic field in the hard-axis region. Since this phenomenon remains largely unexplored, we present an incipient study addressing its potential implications from an applied-physics perspective. The observation of such behavior in polycrystalline Co thin films grown on Si substrates suggests a simple and low-cost platform for spintronic memory and sensing devices based on the remanent planar Hall effect.

cond-mat.other

Exact Phase-Space Rotation in the Trapped Quantum Calogero Model

We develop a microscopic phase-space description of the quantum Calogero model in the presence of an external harmonic confining potential. Building on the quantum Lax-pair structure, we construct a Hermitian Wigner operator whose expectation value obeys the exact phase-space evolution equation d_t rho + lambda d_x rho - Omega^2 x d_lambda rho = 0 for arbitrary initial states and to all orders in the interaction strength. The resulting dynamics is a rigid rotation in phase space with period 2 pi/Omega, providing a microscopic realization of the isochronous dynamics of the trapped Calogero model. We further show that the moments of the phase-space density form rotating multiplets rather than independent conserved quantities. In particular, within the quadratic sector, the unique conserved combination is proportional to the trapped Hamiltonian, providing a nontrivial consistency check of the construction. In the limit Omega -> 0, the equation reduces to the exact free-streaming equation of the untrapped model.

cond-mat.other