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arXiv · 1606.08002

La1-xBi1+xS3 (x~0.08): An n-Type Semiconductor

Fei Han·Huimei Liu·Christos D. Malliakas·Mihai Sturza·Duck Young Chung·Xiangang Wan·Mercouri G. Kanatzidis
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Abstract

The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) {\AA}, b = 4.0722(2) {\AA}, c = 14.7350(9) {\AA}, and $\beta$ = 118.493(5){\deg}. The structure of La0.92Bi1.08S3 is built up of NaCl-type Bi2S5 blocks, and BiS4 and LaS5 infinitely long chains forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ~ 1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.

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Fei Han, Huimei Liu, Christos D. Malliakas, Mihai Sturza, Duck Young Chung, Xiangang Wan, Mercouri G. Kanatzidis. 2016-06-26. La1-xBi1+xS3 (x~0.08): An n-Type Semiconductor. https://doi.org/10.1021/acs.inorgchem.6b00025

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