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arXiv · 1606.01322

Ferroelectric Domain Patterning Controlled Schottky Junction State in Monolayer MoS$_2$

Zhiyong Xiao·Jingfeng Song·David K. Ferry·Stephen Ducharme·Xia Hong
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Abstract

We exploit scanning probe controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS$_2$ between a transistor and a junction state. In the presence of a domain wall, MoS$_2$ exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height varies from 0.38 eV to 0.57 eV and is tunabe by a SiO$_2$ global back-gate, while the tuning range of depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.

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Zhiyong Xiao, Jingfeng Song, David K. Ferry, Stephen Ducharme, Xia Hong. 2016-06-04. Ferroelectric Domain Patterning Controlled Schottky Junction State in Monolayer MoS$_2$. https://doi.org/10.1103/physrevlett.118.236801

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