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arXiv · 1605.08956

Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$

C. Q. Xu·X. Z. Xing·Xiaofeng Xu·L. Q. Che·Bin Chen·Xin Lu·Jianhui Dai·Z. X. Shi
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Abstract

We report details of single crystal growth of stoichiometric bismuthide PtBi$_2$ whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the $c$-axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of $a$=$b$=6.553$Å$, $c$=6.165$Å$. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The $T$-dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor $β$-PdBi$_2$.

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C. Q. Xu, X. Z. Xing, Xiaofeng Xu, L. Q. Che, Bin Chen, Xin Lu, Jianhui Dai, Z. X. Shi. 2016-06-02. Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$. https://doi.org/10.1103/physrevb.94.165119

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