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arXiv · 1605.08539

Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion

A. Kononov·S. V. Egorov·V. A. Kostarev·B. R. Semyagin·V. V. Preobrazhenskii·M. A. Putyato·E. A. Emelyanov·E. V. Deviatov
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Abstract

We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro- (at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.

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A. Kononov, S. V. Egorov, V. A. Kostarev, B. R. Semyagin, V. V. Preobrazhenskii, M. A. Putyato, E. A. Emelyanov, E. V. Deviatov. 2016-05-27. Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion. https://doi.org/10.1134/s0021364016130014

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