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arXiv · 1605.05035

Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond

Yamaguchi Takahide·Yosuke Sasama·Masashi Tanaka·Hiroyuki Takeya·Yoshihiko Takano·Taisuke Kageura·Hiroshi Kawarada
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Abstract

We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance is positive within the range of 2<T<10 K and -7<B<7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore we find: 1) magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; 2) magnetoresistance is nearly independent of the direction of the applied magnetic field; 3) for the in-plane field, the magnetoresistance ratio defined as [rho(B)-rho(0)]/rho(0) follows a universal function of B/T. These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.

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Yamaguchi Takahide, Yosuke Sasama, Masashi Tanaka, Hiroyuki Takeya, Yoshihiko Takano, Taisuke Kageura, Hiroshi Kawarada. 2016-05-17. Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond. https://doi.org/10.1103/physrevb.94.161301

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