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arXiv · 1605.01921

Electrically pumped single-defect light emitters in WSe$_2$

S. Schwarz·A. Kozikov·F. Withers·J. K. Maguire·A. P. Foster·S. Dufferwiel·L. Hague·M. N. Makhonin·L. R. Wilson·A . K. Geim·K. S. Novoselov·A. I. Tartakovskii
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Abstract

Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics.

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S. Schwarz, A. Kozikov, F. Withers, J. K. Maguire, A. P. Foster, S. Dufferwiel, L. Hague, M. N. Makhonin, L. R. Wilson, A . K. Geim, K. S. Novoselov, A. I. Tartakovskii. 2016-05-06. Electrically pumped single-defect light emitters in WSe$_2$. https://doi.org/10.1088/2053-1583%2F3%2F2%2F025038

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