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arXiv · 1604.08185

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

Fen Liu·Yihang Yang·Qian Xue·Zhiwei Gao·Aixi Chen·Guo-Xing Miao
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Abstract

Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter bar-rier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disap-pears when LiF gets thick enough and recovers its intrinsic properties.

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Fen Liu, Yihang Yang, Qian Xue, Zhiwei Gao, Aixi Chen, Guo-Xing Miao. 2016-06-08. Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions. https://doi.org/10.1063/1.4960837

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