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arXiv · 1604.00821

The effect of in-plane magnetic field and applied strain in quantum spin Hall systems: application to InAs/GaSb quantum wells

Lun-Hui Hu·Dong-Hui Xu·Fu-Chun Zhang·Yi Zhou
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Abstract

Motivated by the recent discovery of quantized spin Hall effect in InAs/GaSb quantum wells\cite{du2013}$^,$\cite{xu2014}, we theoretically study the effects of in-plane magnetic field and strain effect to the quantization of charge conductance by using Landauer-Butikker formalism. Our theory predicts a robustness of the conductance quantization against the magnetic field up to a very high field of 20 tesla. We use a disordered hopping term to model the strain and show that the strain may help the quantization of the conductance. Relevance to the experiments will be discussed.

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Lun-Hui Hu, Dong-Hui Xu, Fu-Chun Zhang, Yi Zhou. 2016-04-04. The effect of in-plane magnetic field and applied strain in quantum spin Hall systems: application to InAs/GaSb quantum wells. https://doi.org/10.1103/physrevb.94.085306

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