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arXiv · 1603.06423

Ferroelectric imprint in annealed Bi0.9La0.1Fe0.9Mn0.1O3 thin films

T. T. Carvalho·F. G. Figueiras·M. P. F. Garcia·A. M. Pereira·J. R. A. Fernandes·J. Perez de la Cruz·S. M. S. Pereira·P. B. Tavares·A. Almeida·J. Agostinho Moreira
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Abstract

The present work reports the study of the optimized processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 thin films, grown by RF sputtering on platinum metalized silicon substrates. The combination of deposition at relatively low substrate temperature followed by adequate ex situ annealing leads to thin films with smooth surface morphology and the formation of a high-quality monophasic layer, with the (100)c preferable orientation. The annealed films show ferroelectric imprint.

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T. T. Carvalho, F. G. Figueiras, M. P. F. Garcia, A. M. Pereira, J. R. A. Fernandes, J. Perez de la Cruz, S. M. S. Pereira, P. B. Tavares, A. Almeida, J. Agostinho Moreira. 2016-03-21. Ferroelectric imprint in annealed Bi0.9La0.1Fe0.9Mn0.1O3 thin films. https://arxiv.org/abs/1603.06423

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