arXiv · 1603.04815
Infrared dielectric properties of low-stress silicon oxide
Abstract
Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.
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Giuseppe Cataldo, Edward J. Wollack, Ari D. Brown, Kevin H. Miller. 2016-03-15. Infrared dielectric properties of low-stress silicon oxide. https://doi.org/10.1364/ol.41.001364
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