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arXiv · 1603.04666

Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics

Leonid L. Lev·Dmitry V. Averyanov·Andrey M. Tokmachev·Federico Bisti·Victor A. Rogalev·Vladimir N. Strocov·Vyacheslav G. Storchak
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Abstract

Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.

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Leonid L. Lev, Dmitry V. Averyanov, Andrey M. Tokmachev, Federico Bisti, Victor A. Rogalev, Vladimir N. Strocov, Vyacheslav G. Storchak. 2016-03-15. Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics. https://arxiv.org/abs/1603.04666

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