arXiv · 1603.03459
Experimental evidence for hotspot and phase-slip mechanisms of voltage switching in ultra-thin YBa2Cu3O7-x nanowires
Abstract
We have fabricated ultra-thin YBa2Cu3O7-x nanowires with a high critical current density and studied their voltage switching behavior in the 4.2 - 90 K temperature range. A comparison of our experimental data with theoretical models indicates that, depending on the temperature and nanowire cross section, voltage switching originates from two different mechanisms: hotspot-assisted suppression of the edge barrier by the transport current and the appearance of phase-slip lines in the nanowire. Our observation of hotspot-assisted voltage switching is in good quantitative agreement with predictions based on the Aslamazov-Larkin model for an edge barrier in a wide superconducting bridge.
Explore related subjects
Keep this discovery
M. Lyatti, M. A. Wolff, A. Savenko, M. Kruth, S. Ferrari, U. Poppe, W. Pernice, R. E. Dunin-Borkowski, C. Schuck. 2016-03-10. Experimental evidence for hotspot and phase-slip mechanisms of voltage switching in ultra-thin YBa2Cu3O7-x nanowires. https://doi.org/10.1103/physrevb.98.054505
Cite the original work for its findings. Save a collection to share your selection of sources.