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arXiv · 1603.02619

Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching

V. Ongun Özçelik·Javad G. Azadani·Ce Yang·Steven J. Koester·Tony Low
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Abstract

We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center. Our study, which includes the Group IV and III-V compound monolayer materials, Group V elemental monolayer materials, transition metal dichalcogenides (TMD) and transition metal trichalcogenides (TMT) reveals that almost half of these materials have conduction and/or valence band edges residing at the zone center. Using first-principles density functional calculations, we present the type of the heterojunction for 903 different possible combination of these 2D materials which establishes a periodic table of heterojunctions.

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V. Ongun Özçelik, Javad G. Azadani, Ce Yang, Steven J. Koester, Tony Low. 2016-03-08. Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching. https://doi.org/10.1103/physrevb.94.035125

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