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arXiv · 1603.00250

Dopant-controlled single-electron pumping through a metallic island

Tobias Wenz·Frank Hohls·Xavier Jehl·Marc Sanquer·Sylvain Barraud·Jevgeny Klochan·Girts Barinovs·Vyacheslavs Kashcheyevs
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Abstract

We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.

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Tobias Wenz, Frank Hohls, Xavier Jehl, Marc Sanquer, Sylvain Barraud, Jevgeny Klochan, Girts Barinovs, Vyacheslavs Kashcheyevs. 2016-03-01. Dopant-controlled single-electron pumping through a metallic island. https://doi.org/10.1063/1.4951679

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