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arXiv · 1602.08603

Measurement back-action in stacked graphene quantum dots

Dominik Bischoff·Marius Eich·Oded Zilberberg·Clemens Rössler·Thomas Ihn·Klaus Ensslin
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Abstract

We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher order quantum mechanical back-action mechanisms.

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Dominik Bischoff, Marius Eich, Oded Zilberberg, Clemens Rössler, Thomas Ihn, Klaus Ensslin. 2016-02-27. Measurement back-action in stacked graphene quantum dots. https://doi.org/10.1021/acs.nanolett.5b02167

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