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arXiv · 1602.07227

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

L. Redaelli·A. Mukhtarova·S. Valdueza-Felip·A. Ajay·C. Bougerol·C. Himwas·J. Faure-Vincent·C. Durand·J. Eymery·E. Monroy
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Abstract

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.

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L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, E. Monroy. 2016-02-23. Effect of the quantum well thickness on the performance of InGaN photovoltaic cells. https://doi.org/10.1063/1.4896679

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