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arXiv · 1602.06340

Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films

Marko J. Tadjer·Virginia D. Wheeler·Brian P. Downey·Zachary R. Robinson·David J. Meyer·Charles R. Eddy, Jr.·Fritz J. Kub
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Abstract

Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 ${\deg}$C range, with a R$_{ON}$/R$_{OFF}$ ratio of up to about 750 and critical transition temperature of 7-10 ${\deg}$C. Electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO$_{2}$ sample processed with the 2 hr long anneal. Both the width and slope of the field induced MIT hysteresis were dependent upon the VO$_{2}$ crystalline quality.

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Marko J. Tadjer, Virginia D. Wheeler, Brian P. Downey, Zachary R. Robinson, David J. Meyer, Charles R. Eddy, Jr., Fritz J. Kub. 2016-02-19. Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films. https://doi.org/10.1016/j.sse.2017.06.018

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