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arXiv · 1602.04680

Morphology and chemical composition of cobalt germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology

M. Ewert·Th. Schmidt·J. I. Flege·I. Heidmann·T. Grzela·W. M. Klesse·M. Foerster·L. Aballe·T. Schroeder·J. Falta
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Abstract

The reactive growth of cobalt germanide on Ge(001) was investigated by means of in-situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction ($\mu$-LEED), and ex-situ atomic force microscopy (AFM). At a Co deposition temperature of 670{\deg}C, a rich morphology with different island shapes and dimensions is observed, and a correlation between island morphology and stoichiometry is found. Combining XAS-PEEM and $\mu$-LEED, we were able to identify a large part of the islands to consist of CoGe$_2$, with many of them having an unusual epitaxial relationship: CoGe$_2$[$\bar110$](111) $\parallel$ Ge[$\bar110$](001). Side facets with (112) and (113) orientation have been found for such islands. However, two additional phases were observed, most likely Co$_5$Ge$_7$ and CoGe. The occurrence of these intermediate phases is promoted by defects, as revealed by comparing growth on Ge(001) single crystals and on Ge(001)/Si(001) epilayer substrates.

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M. Ewert, Th. Schmidt, J. I. Flege, I. Heidmann, T. Grzela, W. M. Klesse, M. Foerster, L. Aballe, T. Schroeder, J. Falta. 2016-02-15. Morphology and chemical composition of cobalt germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology. https://arxiv.org/abs/1602.04680

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