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arXiv · 1602.02325

Site-controlled InGaN/GaN single-photon-emitting diode

Lei Zhang·Chu-Hsiang Teng·Pei-Cheng Ku·Hui Deng
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Abstract

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

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Lei Zhang, Chu-Hsiang Teng, Pei-Cheng Ku, Hui Deng. 2016-02-07. Site-controlled InGaN/GaN single-photon-emitting diode. https://doi.org/10.1063/1.4945984

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