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arXiv · 1602.01885

Picosecond electric-field-induced threshold switching in phase-change materials

Peter Zalden·Michael J. Shu·Frank Chen·Xiaoxi Wu·Yi Zhu·Haidan Wen·Scott Johnston·Zhi-Xun Shen·Patrick Landreman·Mark Brongersma·Scott W. Fong·H. -S. Philip Wong·Meng-Ju Sher·Peter Jost·Matthias Kaes·Martin Salinga·Alexander von Hoegen·Matthias Wuttig·Aaron Lindenberg
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Abstract

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag$_4$In$_3$Sb$_{67}$Te$_{26}$. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on sub-picosecond time-scales - faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

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Peter Zalden, Michael J. Shu, Frank Chen, Xiaoxi Wu, Yi Zhu, Haidan Wen, Scott Johnston, Zhi-Xun Shen, Patrick Landreman, Mark Brongersma, Scott W. Fong, H. -S. Philip Wong, Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, Aaron Lindenberg. 2016-02-04. Picosecond electric-field-induced threshold switching in phase-change materials. https://doi.org/10.1103/physrevlett.117.067601

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