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arXiv · 1601.05930

Robust topological edge states at the perfect surface step edge of topological insulator ZrTe$_5$

Xiang-Bing Li·Wen-Kai Huang·Yang-Yang Lv·Kai-Wen Zhang·Chao-Long Yang·Bin-Bin Zhang·Y. B. Chen·Shu-Hua Yao·Jian Zhou·Ming-Hui Lu·Li Sheng·Shao-Chun Li·Jin-Feng Jia·Qi-Kun Xue·Yan-Feng Chen·Dingyu Xing
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Abstract

We report an atomic-scale characterization of ZrTe$_5$ by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe$_5$ is a two dimensional topological insulator. It is also found that an applied magnetic field induces energetic splitting and spatial separation of the topological edge states, which can be attributed to a strong link between the topological edge states and bulk topology. The perfect surface steps and relatively large bandgap make ZrTe$_5$ be a potential candidate for future fundamental studies and device applications.

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Xiang-Bing Li, Wen-Kai Huang, Yang-Yang Lv, Kai-Wen Zhang, Chao-Long Yang, Bin-Bin Zhang, Y. B. Chen, Shu-Hua Yao, Jian Zhou, Ming-Hui Lu, Li Sheng, Shao-Chun Li, Jin-Feng Jia, Qi-Kun Xue, Yan-Feng Chen, Dingyu Xing. 2016-01-22. Robust topological edge states at the perfect surface step edge of topological insulator ZrTe$_5$. https://doi.org/10.1103/physrevlett.116.176803

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