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arXiv · 1601.05165

Diluted magnetic semiconductors with narrow band gaps

Bo Gu·Sadamichi Maekawa
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Abstract

We propose a method to realize diluted magnetic semiconductors (DMS) with p- and n-type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2, which has a band gap of 0.2 eV. In addition, we found a new non-toxic DMS Mn-doped BaZn2Sb2, of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2, the Tc of which was up to 230 K in the recent experiment.

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Bo Gu, Sadamichi Maekawa. 2016-01-20. Diluted magnetic semiconductors with narrow band gaps. https://doi.org/10.1103/physrevb.94.155202

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