Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

Fabian Menges; Matthias Dittberner; Lukas Novotny; Donata Passarello; Stuart Parkin; Martin Spieser; Heike Riel; Bernd Gotsmann

doi:10.1063/1.4948364

arXiv · 1512.09050

Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

Fabian Menges·Matthias Dittberner·Lukas Novotny·Donata Passarello·Stuart Parkin·Martin Spieser·Heike Riel·Bernd Gotsmann

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Abstract

The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, the sphere temperatures were varied in a range between 100 and 200 Celsius. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

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Fabian Menges, Matthias Dittberner, Lukas Novotny, Donata Passarello, Stuart Parkin, Martin Spieser, Heike Riel, Bernd Gotsmann. 2016-01-20. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition. https://doi.org/10.1063/1.4948364

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